Title:
SEMICONDUCTOR DEVICE, POWER CONVERSION DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/024073
Kind Code:
A1
Abstract:
This semiconductor device comprises second-conductive-type first pillar regions (13) that are formed below a plurality of gate trenches (6) in which gate electrodes (8) are embedded, and first-conductive-type second pillar regions (14) that are formed between the adjacent first pillar regions (13) and have a peak impurity concentration higher than that of a drift layer (2). The second pillar regions (14) are each formed of a high-concentration region (14a) and a low-concentration region (14b) that is provided on at least one side of the second pillar region (14) and has a peak impurity concentration lower than that of the high-concentration region (14a).
Inventors:
FUKUI YUTAKA (JP)
TOMINAGA TAKAAKI (JP)
YAMASHIRO YUSUKE (JP)
TOMINAGA TAKAAKI (JP)
YAMASHIRO YUSUKE (JP)
Application Number:
PCT/JP2022/029248
Publication Date:
February 01, 2024
Filing Date:
July 29, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/336
Domestic Patent References:
| WO2019186785A1 | 2019-10-03 |
Foreign References:
| JP2021027138A | 2021-02-22 | |||
| JP2019016802A | 2019-01-31 | |||
| JP2013084904A | 2013-05-09 | |||
| JP2019195081A | 2019-11-07 | |||
| JP6377309B1 | 2018-08-22 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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