Title:
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/028995
Kind Code:
A1
Abstract:
A semiconductor device and a power conversion device according to the present disclosure each comprise: a drift layer (20) of a first conductivity type; a gate electrode (60) which is arranged so as to face a well region (30) of a second conductivity type and a source region (40) of the first conductivity type, with a gate insulating film (50) being interposed therebetween; a source electrode (80) which is arranged on an interlayer insulating film (55) that is provided so as to cover the gate electrode (60), and which is connected to the well region (30) and the source region (40); a first isolation region (21) of the first conductivity type, the first isolation region (21) being arranged in an active region, in which a plurality of MOSFETs each containing the well region (30), the source region (40) and the gate electrode (60) are arranged in the drift layer (20), while being connected to the drift layer (20) and forming a Schottky connection with the source electrode (80); and a surge conduction region (301) which is arranged in the active region over an area that is larger than a first width of the well region (30) when viewed in plan, and which has a region that cuts off the connection between the source electrode (80) and the drift layer (20). Due to this configuration, breakage of the gate insulating film (50) caused by a surge current flowing through the semiconductor device is suppressed, thereby enabling the achievement of a semiconductor device and a power conversion device, each of which has a high surge resistance.
Inventors:
HINO SHIRO (JP)
IIJIMA AKIFUMI (JP)
KAWAHARA KOTARO (JP)
SUGAWARA KATSUTOSHI (JP)
FUJIYOSHI KATSUHIRO (JP)
IIJIMA AKIFUMI (JP)
KAWAHARA KOTARO (JP)
SUGAWARA KATSUTOSHI (JP)
FUJIYOSHI KATSUHIRO (JP)
Application Number:
PCT/JP2022/029727
Publication Date:
February 08, 2024
Filing Date:
August 03, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L21/329; H01L29/78; H01L21/336; H01L29/12; H01L29/872
Domestic Patent References:
| WO2020170411A1 | 2020-08-27 |
Foreign References:
| JP2022002345A | 2022-01-06 | |||
| JP2021180262A | 2021-11-18 | |||
| JP2016006891A | 2016-01-14 | |||
| JP2018511184A | 2018-04-19 |
Attorney, Agent or Firm:
KURATANI, Yasutaka et al. (JP)
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