Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER MODULE DEVICE, POWER CONVERSION DEVICE, AND MOBILE BODY
Document Type and Number:
WIPO Patent Application WO/2024/028996
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a technology capable of increasing surge resistance in a silicon carbide semiconductor device in which an SBD is embedded. A silicon carbide semiconductor device comprises a first conductivity-type semiconductor layer provided with an active region including: a unit cell region including a Schottky barrier diode region and a MOSFET region; and a surge conduction region. The surge conduction region includes a Schottky barrier diode replacement region in which the first conductivity type of the Schottky barrier diode region is replaced with a second conductivity type. The area ratio of the Schottky barrier diode replacement region in the active region is at least 0.01%, and less than the area ratio of the Schottky barrier diode region in the active region when not replaced with the Schottky barrier diode replacement region.
Inventors:
HIRONAKA YOICHI (JP)
SUGAWARA KATSUTOSHI (JP)
HATORI KENJI (JP)
HINO SHIRO (JP)
SUGAWARA KATSUTOSHI (JP)
HATORI KENJI (JP)
HINO SHIRO (JP)
Application Number:
PCT/JP2022/029729
Publication Date:
February 08, 2024
Filing Date:
August 03, 2022
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78; H01L21/329; H01L21/336; H01L29/12; H01L29/872
Domestic Patent References:
| WO2020170411A1 | 2020-08-27 |
Foreign References:
| JP2022002345A | 2022-01-06 | |||
| JP2021180262A | 2021-11-18 | |||
| JP2016006891A | 2016-01-14 | |||
| JP2018511184A | 2018-04-19 |
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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