Title:
SEMICONDUCTOR DEVICE, PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE, APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE, AND METHOD FOR EVALUATING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/082342
Kind Code:
A1
Abstract:
Provided is a process for fabricating a semiconductor device comprising a semiconductor substrate, and a rear electrode wherein a layer containing aluminum, a titanium layer, a nickel layer, and a nickel oxidation-prevention layer are laminated from the semiconductor substrate side. The titanium layer of the rear electrode is formed by performing sputtering while setting the partial pressure of oxygen at 5×10-6 Pa or less. The sputtering apparatus comprises a detector for detecting the partial pressure of oxygen, and a controller which makes it possible to perform sputtering in such an atmosphere where the partial pressure of oxygen is 5×10-6 Pa or less with reference to a detection value of the detector.
Inventors:
TAKEUCHI YASUTAKA (JP)
Application Number:
PCT/JP2009/050578
Publication Date:
July 22, 2010
Filing Date:
January 16, 2009
Export Citation:
Assignee:
TOYOTA MOTOR CO LTD (JP)
TAKEUCHI YASUTAKA (JP)
TAKEUCHI YASUTAKA (JP)
International Classes:
H01L21/28; C23C14/14; C23C14/34; H01L21/285
Foreign References:
| JP2006156910A | 2006-06-15 | |||
| JPS58121674A | 1983-07-20 | |||
| JPH09223779A | 1997-08-26 | |||
| JP2007335431A | 2007-12-27 |
Attorney, Agent or Firm:
KAI-U PATENT LAW FIRM (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
Patent business corporation KAI-U Patent Law Firm (JP)
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