Title:
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/103247
Kind Code:
A1
Abstract:
Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first transistor and a clamping device. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first transistor is disposed on the second nitride semiconductor layer. The first transistor includes a first control electrode, a first current electrode and a second current electrode. The clamping device is disposed on the second nitride semiconductor layer and electrically coupled with the first transistor. The clamping device includes a second transistor and a third transistor electrically coupled with the second transistor. The clamping device is electrically coupled with the first current electrode and the second current electrode of the first transistor.
Inventors:
CHEN CHANG (CN)
LIU XIAOMING (CN)
LI XINYU (CN)
LIU XIAOMING (CN)
LI XINYU (CN)
Application Number:
PCT/CN2022/131892
Publication Date:
May 23, 2024
Filing Date:
November 15, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L27/02
Foreign References:
| US20140092508A1 | 2014-04-03 | |||
| CN104183637A | 2014-12-03 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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