Title:
SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/229728
Kind Code:
A1
Abstract:
The present invention comprises: a semiconductor substrate; an upper surface electrode formed on the upper surface side of the semiconductor substrate; an insulating film formed so as to be adjacent to the upper surface electrode on the upper surface side of the semiconductor substrate; and a lower surface electrode which is formed on the lower surface side of the semiconductor substrate and has a larger surface area than the upper surface electrode. Adopting electrodes having compressive stress for the upper surface electrode and the lower surface electrode results in the semiconductor substrate warping downward.
Inventors:
HATA YUKI (JP)
OSAGA TSUYOSHI (JP)
ATA YASUO (JP)
OSAGA TSUYOSHI (JP)
ATA YASUO (JP)
Application Number:
PCT/JP2020/019138
Publication Date:
November 18, 2021
Filing Date:
May 13, 2020
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L29/78
Domestic Patent References:
| WO2017126344A1 | 2017-07-27 |
Foreign References:
| JP2010205991A | 2010-09-16 | |||
| JP2019125758A | 2019-07-25 |
Attorney, Agent or Firm:
TAKADA, Mamoru et al. (JP)
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