Title:
SEMICONDUCTOR LASER DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/005027
Kind Code:
A1
Abstract:
Provided is a semiconductor laser device including: a layered body containing an active layer; and a light emission layer formed by a dielectric layer which is arranged in contact with a light emission end face of an optical resonator configured by the layered body and has a non-amorphous film, and a conductive unit arranged on the surface or inside the dielectric layer.
Inventors:
TOHYAMA MASAKI (JP)
OKADA MAKOTO (JP)
HORIUCHI OSAMU (JP)
OKADA MAKOTO (JP)
HORIUCHI OSAMU (JP)
Application Number:
PCT/JP2009/062451
Publication Date:
January 14, 2010
Filing Date:
July 08, 2009
Export Citation:
Assignee:
HAMAOKA TOSHIBA ELECTRONICS CO (JP)
TOHYAMA MASAKI (JP)
OKADA MAKOTO (JP)
HORIUCHI OSAMU (JP)
TOHYAMA MASAKI (JP)
OKADA MAKOTO (JP)
HORIUCHI OSAMU (JP)
International Classes:
H01S5/028
Foreign References:
| JP2006261222A | 2006-09-28 | |||
| JP2006203162A | 2006-08-03 | |||
| JP2006186228A | 2006-07-13 | |||
| JP2007061806A | 2007-03-15 | |||
| JP2003037328A | 2003-02-07 | |||
| JP2006228826A | 2006-08-31 |
Attorney, Agent or Firm:
HYUGAJI, Masahiko et al. (JP)
Masahiko Hiugaji (JP)
Masahiko Hiugaji (JP)
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