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Title:
SEMICONDUCTOR PHOTO-ELEMENT AND EXTERNAL RESONANCE LASER HAVING THE SEMICONDUCTOR PHOTO-ELEMENT
Document Type and Number:
WIPO Patent Application WO/2007/040108
Kind Code:
A1
Abstract:
It is possible to provide a semiconductor photo-element having an oblique end face of appropriate reflectivity and an oblique end face of low reflectivity and capable of being applied to an EC-LD or SLD and to provide an external resonance laser having the semiconductor photo-element. The semiconductor photo-element includes a waveguide (1G) containing a stripe-shaped active layer formed on a semiconductor substrate (11) and a first end surface (1TL) and a second end surface (1TH) which are cleavage planes parallel to each other. The normal line of the first end face (1TL) and the optical axis of the waveguide (1G) in the vicinity of the first end face (1TL) define a first angle (φL) which is not zero. The normal line of the second end face (1TH) and the optical axis of the waveguide (1G) in the vicinity of the second end face (1TH) define a second angle (φH) which is not zero and different from the first angle (φL). A first spot size (ωL) in the width direction of the waveguide (1G) in the vicinity of the first end face (1TL) is different from a second spot size (ωH) in the width direction of the waveguide (1G) in the vicinity of the second end face (1TH).

Inventors:
MORI HIROSHI
YAMADA ATSUSHI
SAMEJIMA TAKAHIRO
Application Number:
PCT/JP2006/319121
Publication Date:
April 12, 2007
Filing Date:
September 27, 2006
Export Citation:
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Assignee:
ANRITSU CORP (JP)
MORI HIROSHI
YAMADA ATSUSHI
SAMEJIMA TAKAHIRO
International Classes:
H01S5/22; H01L33/00; H01S5/14
Foreign References:
JP2004266095A2004-09-24
JPH05501938A1993-04-08
JPH0527130A1993-02-05
JPH1051076A1998-02-20
JP2000035522A2000-02-02
JP2003167176A2003-06-13
US4965525A1990-10-23
US6091755A2000-07-18
Other References:
See also references of EP 1931000A4
Attorney, Agent or Firm:
ARIGA, Gunichiro (2-4-9 Yoyog, Shibuya-ku Tokyo53, JP)
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