Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2024/027333
Kind Code:
A1
Abstract:
Disclosed are a semiconductor structure and a method for forming same. The semiconductor structure comprises: a substrate and a plurality of semiconductor pillars. Each semiconductor pillar is provided with a channel region and doped regions located on two opposite sides of the channel region. The semiconductor structure further comprises: first supporting layers, second supporting layers and a plurality of word line structures. The first supporting layers are located on the side walls of the channel regions of the semiconductor pillars arranged in a second direction, and the second supporting layers are located between adjacent first supporting layers. The word line structure is at least located on the two surfaces, in a third direction, of the channel region of each of the plurality of semiconductor pillars arranged in the second direction, and is further located on the two surfaces of the first supporting layer and of the second supporting layer in the third direction.
Inventors:
LIN CHAO (CN)
Application Number:
PCT/CN2023/098689
Publication Date:
February 08, 2024
Filing Date:
June 06, 2023
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/764; H01L21/762; H01L29/06
Foreign References:
| CN115295551A | 2022-11-04 | |||
| CN114420644A | 2022-04-29 | |||
| CN114141712A | 2022-03-04 | |||
| US20170148811A1 | 2017-05-25 |
Attorney, Agent or Firm:
SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)
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