Title:
SEPARABLE CONNECTING BRIDGE (FUSE) AND CONNECTABLE LINE INTERRUPTION (ANTI-FUSE) AND PROCESS FOR PRODUCING AND ACTIVATING A FUSE AND AN ANTI-FUSE
Document Type and Number:
WIPO Patent Application WO1997029515
Kind Code:
A3
Abstract:
The invention relates to a separable connecting bridge (fuse) with an electrically conductive, longitudinally continuous conductive track (1) of a given width transversely to its length of a second type of conductivity opposite to the first, said track being formed in a substrate (2, 2a) of a first type of conductivity, where the semiconductor material of the first type of conductivity has a concentration in relation to the material of the conductive track such that, at a predetermined activation temperature which is higher than the operating temperature of the connecting bridge (12, 13), an interruption takes place over the entire width (m) of the conductive track (1) through the diffusion of the semiconductor material of the first type of conductivity and/or the material of the conductive track (1) of the second type of conductivity. 00000
Inventors:
ZETTLER THOMAS (DE)
WINNERL JOSEF (DE)
GEORGAKOS GEORG (DE)
POCKRANDT WOLFGANG (DE)
WINNERL JOSEF (DE)
GEORGAKOS GEORG (DE)
POCKRANDT WOLFGANG (DE)
Application Number:
PCT/DE1997/000235
Publication Date:
September 18, 1997
Filing Date:
February 06, 1997
Export Citation:
Assignee:
SIEMENS AG (DE)
ZETTLER THOMAS (DE)
WINNERL JOSEF (DE)
GEORGAKOS GEORG (DE)
POCKRANDT WOLFGANG (DE)
ZETTLER THOMAS (DE)
WINNERL JOSEF (DE)
GEORGAKOS GEORG (DE)
POCKRANDT WOLFGANG (DE)
International Classes:
B29C65/02; H01L21/82; H01L23/525; H01L23/535; H01L27/02; B29L31/26; (IPC1-7): H01L23/535
Foreign References:
| GB2100057A | 1982-12-15 | |||
| GB2056771A | 1981-03-18 | |||
| EP0054102A2 | 1982-06-23 | |||
| EP0330299A2 | 1989-08-30 | |||
| EP0655783A1 | 1995-05-31 |
Other References:
DATABASE WPI Section EI Week 9540, Derwent World Patents Index; Class U11, AN 95-310140, XP002034866, ANONYMOUS: "Fuse links for I.C. - with elimination of doped semiconductor region in substrate beneath fuse links"
K. BRACK ET AL.: "directed activation of implanted semiconductor zones", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 3, August 1978 (1978-08-01), NEW YORK, pages 1086, XP002034865
K. BRACK ET AL.: "directed activation of implanted semiconductor zones", IBM TECHNICAL DISCLOSURE BULLETIN, vol. 21, no. 3, August 1978 (1978-08-01), NEW YORK, pages 1086, XP002034865
Download PDF:
Previous Patent: SEMICONDUCTOR COMPONENT
Next Patent: READ-ONLY MEMORY CELL DEVICE WITH INSULATING TRENCHES AND METHOD FOR THE PRODUCTION THEREOF
Next Patent: READ-ONLY MEMORY CELL DEVICE WITH INSULATING TRENCHES AND METHOD FOR THE PRODUCTION THEREOF