Title:
SHOT KEY-TYPE JUNCTION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING THE SAME
Document Type and Number:
WIPO Patent Application WO2010110475
Kind Code:
A1
Abstract:
Disclosed is a shot key-type junction element (1) having a shot key junction wherein an inorganic semiconductor (3) and an organic semiconductor (4) are jointed. The inorganic semiconductor (3) is any of a nitride semiconductor, Si, GaAs, CdS, CdTe, CuInGaSe, InSb, PbTe, PbS, Ge, InN, GaSb, and SiC. A solar cell uses the shot key-type junction element (1), and a photoelectric conversion portion contains the shot key junction. A photoelectric conversion element uses the shot key-type junction element (1), and a conversion portion which converts light to electricity and vice versa contains the shot key junction.
Inventors:
MATSUKI NOBUYUKI (JP)
IROKAWA YOSHIHIRO (JP)
ITAKA KENJI (JP)
KOINUMA HIDEOMI (JP)
SUMIYA MASATOMO (JP)
IROKAWA YOSHIHIRO (JP)
ITAKA KENJI (JP)
KOINUMA HIDEOMI (JP)
SUMIYA MASATOMO (JP)
Application Number:
PCT/JP2010/055574
Publication Date:
September 30, 2010
Filing Date:
March 29, 2010
Export Citation:
Assignee:
NAT INST FOR MATERIALS SCIENCE (JP)
MATSUKI NOBUYUKI (JP)
IROKAWA YOSHIHIRO (JP)
ITAKA KENJI (JP)
KOINUMA HIDEOMI (JP)
SUMIYA MASATOMO (JP)
MATSUKI NOBUYUKI (JP)
IROKAWA YOSHIHIRO (JP)
ITAKA KENJI (JP)
KOINUMA HIDEOMI (JP)
SUMIYA MASATOMO (JP)
International Classes:
H01L29/47; H01L29/872; H01L31/07; H01L31/108
Domestic Patent References:
| WO2008093873A1 | 2008-08-07 | |||
| WO2001015241A1 | 2001-03-01 |
Foreign References:
| JP2010056504A | 2010-03-11 | |||
| JP2004214547A | 2004-07-29 | |||
| JP2008244006A | 2008-10-09 |
Other References:
"Extended Abstracts 2009 (Heisei 21-nen); 56th Annual Spring Meeting of the Japan Society of Applied Physics and Related Societies, 30 March 2009 (30.03.2009)", vol. 1, article NOBUYUKI MATSUKI ET AL.: "Dodensei Tomei Kobunshi/GaN Setsugo ni yoru Schottky-gata Taiyo Denchi no Kaihatsu", pages: 418
"Extended abstracts 2009 (Heisei 21-nen); 70th Annual Fall Meeting of the Japan Society of Applied Physics, 08 September 2009 (08.09.2009)", vol. 1, article NOBUYUKI MATSUKI ET AL.: "Dodensei Tomei Kobunshi/III-zoku Chikkabutsu Handotai Schottky-gata Taiyo Denchi no Kaimen Kozo", pages: 343
N. MATSUKI ET AL.: "Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes", APPLIED PHYSICS EXPRESS, vol. 2, no. 9, 21 August 2009 (2009-08-21), pages 092201
K.M.TRACY ET AL.: "Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag", JOURNAL OF APPLIED PHYSICS, vol. 94, no. 6, 15 September 2003 (2003-09-15), pages 3939 - 3948, XP012060200, DOI: doi:10.1063/1.1598630
J.YAMAURA ET AL.: "Ultraviolet light selective photodiode based on an organic-inorganic heterostructure", APPLIED PHYSICS LETTERS, vol. 83, no. LL, 15 September 2003 (2003-09-15), pages 2097 - 2099, XP001047140, DOI: doi:10.1063/1.1610793
M.NAKANO ET AL.: "Schottky contact on a ZnO (0001) single crystal with conducting polymer", APPLIED PHYSICS LETTERS, vol. 91, no. 14, 1 October 2007 (2007-10-01), pages 142113, XP012099535, DOI: doi:10.1063/1.2789697
"Extended abstracts 2009 (Heisei 21-nen); 70th Annual Fall Meeting of the Japan Society of Applied Physics, 08 September 2009 (08.09.2009)", vol. 1, article NOBUYUKI MATSUKI ET AL.: "Dodensei Tomei Kobunshi/III-zoku Chikkabutsu Handotai Schottky-gata Taiyo Denchi no Kaimen Kozo", pages: 343
N. MATSUKI ET AL.: "Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes", APPLIED PHYSICS EXPRESS, vol. 2, no. 9, 21 August 2009 (2009-08-21), pages 092201
K.M.TRACY ET AL.: "Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag", JOURNAL OF APPLIED PHYSICS, vol. 94, no. 6, 15 September 2003 (2003-09-15), pages 3939 - 3948, XP012060200, DOI: doi:10.1063/1.1598630
J.YAMAURA ET AL.: "Ultraviolet light selective photodiode based on an organic-inorganic heterostructure", APPLIED PHYSICS LETTERS, vol. 83, no. LL, 15 September 2003 (2003-09-15), pages 2097 - 2099, XP001047140, DOI: doi:10.1063/1.1610793
M.NAKANO ET AL.: "Schottky contact on a ZnO (0001) single crystal with conducting polymer", APPLIED PHYSICS LETTERS, vol. 91, no. 14, 1 October 2007 (2007-10-01), pages 142113, XP012099535, DOI: doi:10.1063/1.2789697
Attorney, Agent or Firm:
HIRAYAMA KAZUYUKI (JP)
Kazuyuki Hirayama (JP)
Kazuyuki Hirayama (JP)
Download PDF: