SILICON BASED CONDUCTIVE MATERIAL AND PROCESS FOR PRODUCTION THEREOF

Title:

SILICON BASED CONDUCTIVE MATERIAL AND PROCESS FOR PRODUCTION THEREOF

Document Type and Number:

WIPO Patent Application WO/1999/022411

Kind Code:

A1

Abstract:

A silicon based conductive material based on a semiconductor silicon and having an electric resistivity of 10?-3¿ ($g(V) . m) or less at ambient temperature, which has been unattainable heretofore, while facilitating production and handling. An electric resistivity of 10?-6¿ ($g(V) . m) or less, which is common for conductors, can be realized by adding relatively large quantities of various kinds of elements to silicon. The conductive material can be provided in a semiconductor silicon substrate in a desired pattern by ion beam implantation and patterning. It can be employed not only in the form of a substrate, a rod or a wire, but also in the form of fine particles dispersed in a resin or glass to be employed in various applications requiring conduction, including a conductive sheet material.

Inventors:

HARUYAMA SHUNICHI (JP)
YAMASHITA OSAMU (JP)
SADATOMI NOBUHIRO (JP)
SAIGOU TSUNEKAZU (JP)

Application Number:

PCT/JP1998/003642

Publication Date:

May 06, 1999

Filing Date:

August 14, 1998

Export Citation:

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Assignee:

SUMITOMO SPEC METALS (JP)
HARUYAMA SHUNICHI (JP)
YAMASHITA OSAMU (JP)
SADATOMI NOBUHIRO (JP)
SAIGOU TSUNEKAZU (JP)

International Classes:

H01B1/04; H01L23/498; H01L23/532; H01L35/16; H01L35/22; (IPC1-7): H01L35/14; H01L21/44; H01L35/34; H01L29/43; H01L21/28

Foreign References:

JPH038707A	1991-01-16
JPH0374885A	1991-03-29
JPH07321044A	1995-12-08
JPH04716A	1992-01-06
JPH04137619A	1992-05-12
JPS63119589A	1988-05-24
JPH01276678A	1989-11-07

Other References: