Title:
SLURRY AND POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/070314
Kind Code:
A1
Abstract:
The present invention provides a slurry containing: abrasive grains; a compound X having 3 or more carbon atoms; and water. The abrasive grains contain a cerium oxide, and the dispersion term dD for the Hansen solubility parameters of the compound X is 18.0 MPa1/2 or less. The present invention also provides a polishing method that involves using said slurry to polish a to-be-polished surface.
More Like This:
Inventors:
FURUKAWA SATOSHI (JP)
IWANO TOMOHIRO (JP)
KUBOTA SHIGEKI (JP)
UEDA ATSUKO (JP)
KAGESAWA KOICHI (JP)
IWANO TOMOHIRO (JP)
KUBOTA SHIGEKI (JP)
UEDA ATSUKO (JP)
KAGESAWA KOICHI (JP)
Application Number:
PCT/JP2020/037172
Publication Date:
April 07, 2022
Filing Date:
September 30, 2020
Export Citation:
Assignee:
SHOWA DENKO MATERIALS CO LTD (JP)
International Classes:
H01L21/304
Domestic Patent References:
WO2019181013A1 | 2019-09-26 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
Download PDF:
Previous Patent: SLURRY AND POLISHING METHOD
Next Patent: WAVEFORM RESTORATION DEVICE, WAVEFORM RESTORATION METHOD, AND PROGRAM
Next Patent: WAVEFORM RESTORATION DEVICE, WAVEFORM RESTORATION METHOD, AND PROGRAM