Title:
SOLID-STATE IMAGING ELEMENT, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/162408
Kind Code:
A1
Abstract:
This solid-state imaging element comprises a semiconductor substrate, a first element section, and a second element section. The first element section includes a light reception unit and a transfer unit, and the second element section includes a capacitance unit. The transfer unit includes a first transfer electrode and a second transfer electrode, and an insulating layer. The capacitance unit includes a first capacitance electrode and a second capacitance electrode which overlap each other, and the insulating layer. A part of the first transfer electrode overlaps a part of the second transfer electrode. The insulating layer has a first portion located between the part of the first transfer electrode and the part of the second transfer electrode. The insulating layer has a second portion located between the first capacitance electrode and the second capacitance electrode. The thickness of the first portion is greater than the thickness of the second portion.
Inventors:
TAKAGI SHIN-ICHIRO (JP)
TANAKA FUMIYA (JP)
YAMADA ATSUNORI (JP)
YONETA YASUHITO (JP)
TANAKA FUMIYA (JP)
YAMADA ATSUNORI (JP)
YONETA YASUHITO (JP)
Application Number:
PCT/JP2022/045534
Publication Date:
August 31, 2023
Filing Date:
December 09, 2022
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L27/148; H04N25/00
Foreign References:
| JP2004063627A | 2004-02-26 | |||
| JP2005072932A | 2005-03-17 | |||
| JP2021044439A | 2021-03-18 | |||
| JPH0324759A | 1991-02-01 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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