Title:
SOLID-STATE IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2023/162407
Kind Code:
A1
Abstract:
This solid-state imaging element comprises: a semiconductor substrate; a first element part formed on the semiconductor substrate; and a second element part formed on the semiconductor substrate. The first element part has: a light receiving unit that generates an electric charge in response to the incidence of light; and a transfer unit that transfers the electric charge. The transfer unit has: a first transfer electrode and a second transfer electrode that are disposed on an electric-charge transfer region of the semiconductor substrate, and that are aligned in an electric-charge transfer direction; and a discharge gate electrode that is disposed on an electric-charge discharge region of the semiconductor substrate, the region extending along the electric-charge transfer region. The first transfer electrode is formed as a first layer, and the second transfer electrode and the discharge gate electrode are formed as a second layer. The first transfer electrode includes a section overlapping with a section of the second transfer electrode and a section overlapping with a section of the discharge gate electrode. The second transfer electrode is away from the discharge gate electrode.
Inventors:
TANAKA FUMIYA (JP)
YAMADA ATSUNORI (JP)
TAKAGI SHIN-ICHIRO (JP)
YONETA YASUHITO (JP)
YAMADA ATSUNORI (JP)
TAKAGI SHIN-ICHIRO (JP)
YONETA YASUHITO (JP)
Application Number:
PCT/JP2022/045530
Publication Date:
August 31, 2023
Filing Date:
December 09, 2022
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
International Classes:
H01L27/148; H04N25/00
Foreign References:
| JP2021044439A | 2021-03-18 | |||
| JPH10256522A | 1998-09-25 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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