Title:
SPUTTERING TARGET, MANUFACTURING METHOD THEREFOR, AND MANUFACTURING METHOD FOR MAGNETIC RECORDING MEDIUM
Document Type and Number:
WIPO Patent Application WO/2022/049935
Kind Code:
A1
Abstract:
A purpose of the present invention is to lower the specific resistance of a sputtering target containing silicon nitride (Si3N4). Provided is a sputtering target containing Si3N4, SiC, MgO, and TiCN, and having a specific resistance of 10 mΩ · cm or less.
Inventors:
IWABUCHI YASUYUKI (JP)
Application Number:
PCT/JP2021/027940
Publication Date:
March 10, 2022
Filing Date:
July 28, 2021
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
C04B35/596; C23C14/34
Foreign References:
| JPH10291863A | 1998-11-04 | |||
| JPS6295802A | 1987-05-02 | |||
| JPH07180031A | 1995-07-18 | |||
| JP2000313670A | 2000-11-14 | |||
| JP2018188714A | 2018-11-29 | |||
| JPH05213674A | 1993-08-24 |
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
Download PDF: