SUPPORT SUBSTRATE AND PREPARATION METHOD THEREFOR, AND PROCESSING METHOD FOR SEMICONDUCTOR SUBSTRATE

WIPO Patent Application WO/2024/131215

A1

The present invention provides a support substrate, a preparation method therefor and a processing method for a semiconductor substrate. A pit structure in the support substrate forms a hollow design, such that when a semiconductor substrate is bonded, only an edge of the semiconductor substrate is attached to an annular peripheral portion of the support substrate, and the semiconductor substrate, in particular a central region of a fabrication device, is not damaged. Due to the reduction of a contact surface, damage to the surface of the semiconductor substrate is reduced. Furthermore, by means of configuring a groove in the peripheral portion, gas generated at an interface during bonding can be better diffused to an external environment, thereby preventing defects such as bubbles, etc. Moreover, the groove is also beneficial for releasing stress generated during bonding, thereby increasing the bonding strength. Meanwhile, during the process of removing and de-bonding a bonding layer, due to the existence of the groove, a corrosive liquid, gas or plasma easily gets close to the bonding interface of the semiconductor substrate and the support substrate, so that the bonding layer can be more effectively removed.

WANG, Shinan (No. 235 Chengbei Roa, Jiading District Shanghai 0, CN)

PCT/CN2023/123923

June 27, 2024

October 11, 2023

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SHANGHAI INDUSTRIAL MTECHNOLOGY RESEARCH INSTITUTE (No. 235 Chengbei Roa, Jiading District Shanghai 0, CN)

H01L21/683; H01L21/67; H01L21/46; H01L21/30

J.Z.M.C. PATENT AND TRADEMARK LAW OFFICE (GENERAL PARTNERSHIP) (7th Floor No. 6, Lane 600, West Yunling Roa, Putuo District Shanghai 3, CN)

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