SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE

Title:

SURFACE ACOUSTIC WAVE FUNCTIONAL DEVICE

Document Type and Number:

WIPO Patent Application WO/1998/004040

Kind Code:

A1

Abstract:

A surface acoustic wave functional element is provided with a semiconductor layer on a piezoelectric substrate or piezoelectric thin film substrate and utilizes the interaction between surface acoustic waves propagated on the surface of the substrate and electrons in the semiconductor layer. The semiconductor layer is formed outside the propagating path of the surface acoustic waves and provided with a plurality of grating electrodes perpendicularly to the propagating path, an active layer, and a buffer layer lattice-matched with the active layer. Using this surface acoustic wave functional device, a surface acoustic wave amplifier with a high amplification degree at a practical low voltage is provided, and a surface acoustic wave convolver having such a high efficiency that has not been achieved so far, is provided.

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Inventors:

YAMANOUCHI KAZUHIKO (JP)
ODAGAWA HIROYUKI (JP)
SATO WASUKE (JP)
KUZE NAOHIRO (JP)
GOTO HIROMASA (JP)

Application Number:

PCT/JP1997/002506

Publication Date:

January 29, 1998

Filing Date:

July 18, 1997

Export Citation:

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Assignee:

ASAHI CHEMICAL IND (JP)
YAMANOCHI KAZUHIKO (JP)
ODAGAWA HIROYUKI (JP)
SATO WASUKE (JP)
KUZE NAOHIRO (JP)
GOTO HIROMASA (JP)

International Classes:

G06G7/195; H03H9/02; H03H9/145; (IPC1-7): H03H9/145; H03H9/72

Foreign References:

JPH08250974A	1996-09-27
JPH08307203A	1996-11-22
JPH0677556A	1994-03-18
JPH0226118A	1990-01-29

Other References:

PART II OF PROCEEDINGS OF THE ACOUSTICAL SOCIETY OF JAPAN 2-9-7, KAZUHIKO YAMANOUCHI, KAZUSUKE SATO, SEIJI KUMAGAYA, "Analysis of Surface Acoustic Wave Amplifier by Impedance Matching Method (in Japanese)", pp. 993-994.
See also references of EP 0913935A4

Attorney, Agent or Firm:

Tani, Yoshikazu (6th floor Suite 300, 1-31, Akasaka 5-chom, Minato-ku Tokyo 107, JP)

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