Title:
TEST STRUCTURE AND TEST METHOD
Document Type and Number:
WIPO Patent Application WO/2022/104805
Kind Code:
A1
Abstract:
A test structure and a test method. The test structure comprises: a first resistor (21); and at least one second resistor (22) electrically connected in series with the first resistor (21), the number of the second resistors (22) being M×N, M and N being positive integers, and all the second resistors (22) being electrically connected in parallel with each other. A resistance difference value is obtained by providing different numbers of resistors, thereby accurately calculating the resistance values of a phase change material and a heater.
Inventors:
LIAO YUCHENG (CN)
CHIU CHINGSUNG (CN)
CHANG MINGFENG (CN)
CHIU CHINGSUNG (CN)
CHANG MINGFENG (CN)
Application Number:
PCT/CN2020/130937
Publication Date:
May 27, 2022
Filing Date:
November 23, 2020
Export Citation:
Assignee:
JIANGSU ADVANCED MEMORY TECH CO LTD (CN)
JIANGSU ADVANCED MEMORY SEMICONDUCTOR LTD (CN)
SILOAM HOLDINGS CO LTD (SC)
JIANGSU ADVANCED MEMORY SEMICONDUCTOR LTD (CN)
SILOAM HOLDINGS CO LTD (SC)
International Classes:
G01R27/00; H01L23/544; G01R27/08; H01L45/00
Foreign References:
| CN211743145U | 2020-10-23 | |||
| CN104779238A | 2015-07-15 | |||
| CN101271873A | 2008-09-24 | |||
| CN103187403A | 2013-07-03 | |||
| CN104051021A | 2014-09-17 | |||
| US20120062268A1 | 2012-03-15 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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