Title:
THIN-FILM TRANSISTOR, METHOD FOR PRODUCING THIN-FILM TRANSISTOR, AND DISPLAY DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/052127
Kind Code:
A1
Abstract:
A thin-film transistor equipped with a gate electrode, an insulating film disposed on the gate electrode, a semiconductor layer positioned so as to face the gate electrode with the insulating film interposed therebetween, and a source/drain wiring layer which is electrically connected to the semiconductor layer. The source/drain wiring layer contacts the semiconductor layer between the semiconductor layer and the insulating film, and has a first wiring layer comprising a transparent conductive film and a second wiring layer provided so as to overlap part of the first wiring layer. Furthermore, another semiconductor layer comprising the same material as that of the semiconductor layer is layered on part of the second wiring layer.
Inventors:
AMARI KOICHI (JP)
Application Number:
PCT/JP2015/075703
Publication Date:
April 07, 2016
Filing Date:
September 10, 2015
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
H01L21/336; G02F1/1368; H01L21/28; H01L29/786; H01L51/05; H01L51/40; H01L51/50
Foreign References:
| JPH08236775A | 1996-09-13 | |||
| JPH09186334A | 1997-07-15 | |||
| JP2013138196A | 2013-07-11 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
Patent business corporation wings international patent firm (JP)
Patent business corporation wings international patent firm (JP)
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