Title:
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY ADHESION LAYER AND METHODS FOR FORMING THE SAME
Document Type and Number:
WIPO Patent Application WO/2021/035738
Kind Code:
A1
Abstract:
A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved conductor layers and insulating layers. The 3D memory device also includes channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes first and second source contacts separated by a support structure. The source structure also includes an adhesion layer. At least a portion of the adhesion layer is between the first and second source contacts and conductively connects the first and second source contacts.
Inventors:
WANG QINGQING (CN)
XU WEI (CN)
HUANG PAN (CN)
YAN PING (CN)
HUO ZONGLIANG (CN)
ZHOU WENBIN (CN)
XU WEI (CN)
HUANG PAN (CN)
YAN PING (CN)
HUO ZONGLIANG (CN)
ZHOU WENBIN (CN)
Application Number:
PCT/CN2019/103860
Publication Date:
March 04, 2021
Filing Date:
August 30, 2019
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11568; H01L27/11563; H01L27/11578
Foreign References:
| US20160079254A1 | 2016-03-17 | |||
| CN109904170A | 2019-06-18 | |||
| CN110112134A | 2019-08-09 | |||
| CN109417078A | 2019-03-01 | |||
| US20170148800A1 | 2017-05-25 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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