Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY ADHESION LAYER AND FORMING METHODS THEREOF
Document Type and Number:
WIPO Patent Application WO/2021/035739
Kind Code:
A1
Abstract:
A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved a plurality of conductor layers and a plurality of insulating layers. The 3D memory device also includes a plurality of channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes a support structure dividing the source structure into first and second sections. The source structure also includes an adhesion layer. At least a portion of the adhesion layer extends through the support structure and conductively connects the first and second sections.

More Like This:
JP2018157069SEMICONDUCTOR STORAGE DEVICE
WO/2021/002942ASSEMBLIES HAVING CONDUCTIVE STRUCTURES WITH THREE OR MORE DIFFERENT MATERIALS
WO/2022/083298THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR FORMING THE SAME
Inventors:
XIA ZHENGLIANG (CN)
HUANG PAN (CN)
XU WEI (CN)
YAN PING (CN)
HUO ZONGLIANG (CN)
ZHOU WENBIN (CN)
Application Number:
PCT/CN2019/103861
Publication Date:
March 04, 2021
Filing Date:
August 30, 2019
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/1157; H01L27/11573; H01L27/11582
Foreign References:
US20160079254A12016-03-17
CN109844949A2019-06-04
CN109904170A2019-06-18
CN109003983A2018-12-14
US20180108674A12018-04-19
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY ADHESION LAYER AND METHODS FOR FOR...

Next Patent: ACCESS CONTROL METHOD, SERVER, ACCESS DEVICE AND STORAGE MEDIUM