TRENCH-GATE POWER MOSFET AND MANUFACTURING METHOD THEREFOR

WIPO Patent Application WO/2024/021977

A1

Disclosed in the present application are a trench-gate power MOSFET. The trench-gate power MOSFET comprises: a base, which is a base provided with a wide-bandgap semiconductor of a first conductivity type; an epitaxial layer, which is grown on the base and is of the first conductivity type; a body region, which is formed on the epitaxial layer and is of a second conductivity type; a trench, which is formed by means of etching the body region, wherein the length direction of the trench is parallel to a projection, on the surface of a wafer, of one selected crystallographic direction among all crystallographic directions of the wafer; a second conductivity-type pillar, which is formed by implanting first ions into a bottom region of the trench in the crystallographic direction of a wide-bandgap semiconductor material, wherein the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is at least not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate, which is formed by filling the trench with a filler. The present invention has the advantage of improving the current capability and reliability of a trench-type MOSFET.

ZHANG YONGXI (CN)
CHEN WEI (CN)
HUANG HAITAO (CN)

PCT/CN2023/103303

February 01, 2024

June 28, 2023

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INVENTCHIP TECH CO LTD (CN)

H01L29/06; H01L21/04; H01L21/336; H01L29/16; H01L29/423; H01L29/78

CN115084236A	2022-09-20
CN111276540A	2020-06-12
US20170345891A1	2017-11-30
CN112017954A	2020-12-01
US20180350976A1	2018-12-06

WATSON & BAND INTELLECTUAL PROPERTY AGENT LTD. (CN)

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