Title:
TSV PRODUCT, TSV SAMPLE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/279415
Kind Code:
A1
Abstract:
The present application relates to the technical field of semiconductor device manufacturing processes, in particular to a TSV product, a TSV sample and a preparation method therefor. The preparation method comprises: depositing a first metal layer at the bottom of each TSV, the first metal layer covering the bottom of the via, and filling an adhesive prepared in advance into an inner wall in the middle of each TSV of a sample to be processed; depositing and forming a second metal layer over each TSV, and the second metal layer covering an upper portion of an opening of the TSV; depositing a covering layer on the second metal layer to obtain a pre-processed sample to be processed; and using double plasma focused ion beams (PFIBs) to cut the pre-processed sample to be processed according to a preset cutting manner to form a TSV sample to expose a cross section of each TSV cut. In this way, a curtain effect and an address surface recess of a TSV sample due to I-Beam irradiation can be avoided, so that the accuracy of measurement of size parameters of the TSV can be improved.
Inventors:
CHEN JIABAO (CN)
Application Number:
PCT/CN2021/106009
Publication Date:
January 12, 2023
Filing Date:
July 13, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G01N1/28
Foreign References:
| US6303399B1 | 2001-10-16 | |||
| CN105352768A | 2016-02-24 | |||
| CN103257066A | 2013-08-21 | |||
| JP2012185014A | 2012-09-27 | |||
| CN103196713A | 2013-07-10 | |||
| CN112577982A | 2021-03-30 | |||
| US20020104612A1 | 2002-08-08 | |||
| CN104075918A | 2014-10-01 |
Attorney, Agent or Firm:
TDIP & PARTNERS (CN)
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