Title:
INFRARED SENSOR
Document Type and Number:
Japanese Patent JP2019161066
Kind Code:
A
Abstract:
To provide an infrared sensor improved in detection characteristics.SOLUTION: An infrared sensor of the present invention includes: a substrate 1; an n-type contact layer 2 formed on the substrate 1; a first barrier layer 3 which includes a compound semiconductor layer containing Al, In, As and Sb, which is formed on the n-type contact layer, and which has an n-type conductivity; an active layer 4 which includes a compound semiconductor layer containing InAsSb(0≤x≤1) and which is formed on the n-type barrier layer 3; and a second barrier layer 5 which includes a compound semiconductor layer containing AL, Ga, As and Sb and which is formed on the active layer 4.SELECTED DRAWING: Figure 1
Inventors:
TOGA HIROTAKA
FUJITA HIROMI
FUJITA HIROMI
Application Number:
JP2018047098A
Publication Date:
September 19, 2019
Filing Date:
March 14, 2018
Export Citation:
Assignee:
ASAHI KASEI DENSHI KK
International Classes:
H01L31/10; G01J1/02; H01L31/0264
Domestic Patent References:
| JP2012146806A | 2012-08-02 | |||
| JP2016181558A | 2016-10-13 | |||
| JP2017183424A | 2017-10-05 |
Foreign References:
| WO2015068658A1 | 2015-05-14 | |||
| US9748427B1 | 2017-08-29 |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Koichiro God
Toshiki Suzuki
Mitsutsugu Sugimura
Koichiro God
Toshiki Suzuki