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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020109717
Kind Code:
A
Abstract:
To provide a semiconductor device that achieves better operation.SOLUTION: A semiconductor device comprises a first transistor and a second transistor electrically connected to a gate of the first transistor. The first transistor has a first terminal electrically connected to a first wire, a second terminal electrically connected to a second wire, and a gate electrically connected to a first terminal or a second terminal of the second transistor. Each of the first and second transistors has an oxide semiconductor in at least a channel region, and has a small off current.SELECTED DRAWING: Figure 2

Inventors:
UMEZAKI ATSUSHI
KIMURA HAJIME
Application Number:
JP2020029133A
Publication Date:
July 16, 2020
Filing Date:
February 25, 2020
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G11C19/28; G09G3/20; G09G3/36; H01L29/786; H03K19/0175; H03K19/096
Domestic Patent References:
JP2005050502A2005-02-24
JP2004295126A2004-10-21
JP2008003602A2008-01-10
JP2008107807A2008-05-08



 
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