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Title:
窒化物系半導体素子
Document Type and Number:
Japanese Patent JP5025540
Kind Code:
B2
Abstract:
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

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Inventors:
Tadao Toda
Masayuki Hata
Tsutomu Yamaguchi
Yasuhiko Nomura
Application Number:
JP2008076847A
Publication Date:
September 12, 2012
Filing Date:
March 24, 2008
Export Citation:
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Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01S5/343; H01L21/285; H01L33/00; H01L33/32; H01L33/40
Domestic Patent References:
JP2001176823A
JP2000044400A
JP2000049374A
JP2002016000A
Attorney, Agent or Firm:
Keishin Terayama
Ichitaro Ito
Hiroyuki Miyoshi



 
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