Title:
電流狭窄型半導体発光素子の製造方法
Document Type and Number:
Japanese Patent JP5164641
Kind Code:
B2
Abstract:
A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm.
Inventors:
Yutaka Ohta
Oka Yoshikazu
Oka Yoshikazu
Application Number:
JP2008096242A
Publication Date:
March 21, 2013
Filing Date:
April 02, 2008
Export Citation:
Assignee:
dowa Electronics Co., Ltd.
International Classes:
H01L33/32; H01L33/06; H01L33/10; H01L33/14; H01L33/38
Domestic Patent References:
| JP11330546A | ||||
| JP9326507A | ||||
| JP2017683A | ||||
| JP60098689A | ||||
| JP11274556A | ||||
| JP2007157766A | ||||
| JP2001044497A | ||||
| JP63018661A |
Attorney, Agent or Firm:
Kenji Sugimura
Kiyoshi Kuruma
Takanashi Reiko
Kiyoshi Kuruma
Takanashi Reiko