Title:
抵抗変化素子、半導体装置、及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6860871
Kind Code:
B2
Abstract:
A variable resistance element according to the present invention comprises a configuration in which an ion conduction layer is arranged between an upper electrode and a lower electrode, wherein a recess part is formed on a surface of the lower electrode of the variable resistance element, and the ion conduction layer is formed in contact with at least the recess part on a surface of the lower electrode.
Inventors:
Naoki Banno
Munehiro Tada
Munehiro Tada
Application Number:
JP2015238610A
Publication Date:
April 21, 2021
Filing Date:
December 07, 2015
Export Citation:
Assignee:
Nanobridge Semiconductor Co., Ltd.
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2011238875A | ||||
| JP2011211101A |
Foreign References:
| US20150187842 | ||||
| WO2011158821A1 |
Attorney, Agent or Firm:
Patent Service Corporation Taiyo International Patent Office