Title:
反射防止膜、反射防止膜の製造方法、及び反射防止膜を用いた半導体装置
Document Type and Number:
Japanese Patent JP5123830
Kind Code:
B2
Abstract:
To improve a transmission rate of an antireflection film, the antireflection film includes: a first silicon oxide film (2), which is formed on a silicon substrate (1); a polysilicon film (3), which is formed on the first silicon oxide film (2) to a thickness of 6 nm through 14 nm; and a second silicon oxide film (4), which is formed on the polysilicon film (3). The transmission rate of the antireflection film is further improved if a thickness of the first silicon oxide film (2) is set to 14 nm through 35 nm. When used in a photoelectric conversion element for such as a solid state image sensor and a photovoltaic generator, the antireflection film may enhance efficiency of photoelectric conversion.
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Inventors:
Eiji Matsuyama
Application Number:
JP2008300324A
Publication Date:
January 23, 2013
Filing Date:
November 26, 2008
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
G02B1/11; G02B1/115; H01L27/14; H01L27/146; H01L31/0216; H01L31/04; H01L31/068; H01L31/10
Domestic Patent References:
| JP2008027980A | ||||
| JP2005005540A | ||||
| JP2008532311A | ||||
| JP11340496A | ||||
| JP2000089010A | ||||
| JP2001202822A | ||||
| JP2001044468A | ||||
| JP2002252290A |
Attorney, Agent or Firm:
Ken Ieiri