Title:
人工ニューロン装置およびニューロモーフィック・システム
Document Type and Number:
Japanese Patent JP6829260
Kind Code:
B2
Abstract:
Artificial neuron apparatus includes a resistive memory cell connected in an input circuit having a neuron input, for receiving neuron input signals, and a current source for supplying a read current to the cell. The input circuit is selectively configurable in response to a set of control signals, defining alternating read and write phases of operation, to apply the read current to the cell during the read phase and to apply a programming current to the cell, for programming cell resistance, on receipt of a neuron input signal during the write phase. The cell resistance is progressively changed from a first state to a second state in response to successive neuron input signals. The apparatus further includes an output circuit comprising a neuron output and a digital latch which is connected to the input circuit for receiving a measurement signal dependent on cell resistance.
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Inventors:
Elev Seriu, Evangelos
Cal, Lucas
Pantatsu, Angeliki
Sebastian, Abu
Touma, Thomas
Stanisavryevich, Milos
Cal, Lucas
Pantatsu, Angeliki
Sebastian, Abu
Touma, Thomas
Stanisavryevich, Milos
Application Number:
JP2018544068A
Publication Date:
February 10, 2021
Filing Date:
February 24, 2017
Export Citation:
Assignee:
Samsung Electronics Company Limited
International Classes:
G06N3/063; G06G7/60; G11C11/54; G11C13/00
Domestic Patent References:
| JP2009282782A |
Foreign References:
| US20150006455 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Shinsuke Onuki
Tadahiko Ito
Shinsuke Onuki