BURIED GATE TYPE ELECTROSTATIC INDUCTION THYRISTOR

Title:

BURIED GATE TYPE ELECTROSTATIC INDUCTION THYRISTOR

Document Type and Number:

Japanese Patent JPH09246524

Kind Code:

A

Abstract:

To provide a cathode junction structure which is effective for speeding up the turn off without loosing ignition sensitiveness, turn on speed, and turn on voltage, etc.

In an SI thyristor which has buried gate structure, a cathode electrode 4 is made on one side of the layer where an n-type cathode 11 and a p-type low resistance region are arranged in parallel or only the n-type cathode region 11 is arranged. Then, on the other side, an n-type base layer 13 is made through an n-type layer 12, and next a p-type gate region 14 is buried in the n-type base layer 14. Herein, the concentration of impurities of the n-type layer is larger than that of the n-type base layer 13, and besides it is made under the concentration of implanted carriers in on condition, and also the concentration of impurities goes higher continuously toward the surface of the element.

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Inventors:

YURA MASASHI

Application Number:

JP8209496A

Publication Date:

September 19, 1997

Filing Date:

March 11, 1996

Export Citation:

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Assignee:

TOYO ELECTRIC MFG CO LTD

International Classes:

H01L29/74; (IPC1-7): H01L29/74

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