Title:
DEPOSITION OF LOW RESISTIVITY TITANIUM OXYNITRIDE FILM DEPOSITED IN POSTSTATE GIVING EXCELLENT TEXTURE TO CONDUCTIVE LAYER
Document Type and Number:
Japanese Patent JP3732010
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent deterioration in the fibrous texture of Al deposited in a poststage and to eliminate the need of an annealing state in an another place, in the process of sputtering, by intruding Ti and adding O to a gaseous mixture.
SOLUTION: The saturation by nitrogen of a titanium bond is attained in the flow rate ratio between nitrogen and oxygen of 25:1, but, even in the case of the N:O flow rate ratio higher than about 15:1, Ti is allowed to react with N more preferentially than O to form titanium oxynitride layer. The titanium oxynitride layer shows barrier performance more excellent than that of TiN at all barrier deposition temps. The sputtering process is executed at about at least 300°C. As for the formation of the titanium oxynitride barrier layer, Ti coating is deposited on a substrate, and thereon, a film is sputtered from a target in an atmosphere having an N:O flow rate ratio close to that for forming titanium oxynitride, and an Al conductor is deposited on the substrate.
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Inventors:
Bruce David Jitreman
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Boo buoy
Application Number:
JP20849298A
Publication Date:
January 05, 2006
Filing Date:
June 18, 1998
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C14/06; C23C14/34; H01L21/203; H01L21/28; H01L21/285; H01L21/768; (IPC1-7): C23C14/06; C23C14/34; H01L21/203; H01L21/285
Domestic Patent References:
| JP8191106A | ||||
| JP5311426A |
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Sadafumi Kobori
Yukihiro Ikeda
Hajime Asamura
Sadafumi Kobori
Yukihiro Ikeda