Title:
DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2014044439
Kind Code:
A
Abstract:
To provide a transistor composed of a new multi-gate structure with improved operating characteristic and reliability.
The transistor composed of a multi-gate structure includes at least two gate electrodes, at least two channel forming areas connected in series, a source area, a drain area, and a semiconductor layer having a high concentration impurity area. The channel length of the channel forming area adjacent to the source area side is larger than the channel length of the channel forming area adjacent to the drain area side.
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Inventors:
SAKAKURA MASAYUKI
YAMAZAKI SHUNPEI
YAMAZAKI SHUNPEI
Application Number:
JP2013238604A
Publication Date:
March 13, 2014
Filing Date:
November 19, 2013
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
G09F9/30; H01L21/336; H01L21/768; H01L27/32; H01L29/786; H01L51/50; H05B44/00
Domestic Patent References:
| JP2005159368A | 2005-06-16 | |||
| JP2004079509A | 2004-03-11 | |||
| JP2003168569A | 2003-06-13 | |||
| JP2005165324A | 2005-06-23 |