Title:
DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2022088440
Kind Code:
A
Abstract:
To provide a display device having a high aperture ratio or a semiconductor device having an element with a large area.SOLUTION: A TFT channel forming region having a multi-gate structure is provided below wiring disposed between neighboring pixel electrodes (or electrodes of an element). A channel width direction of a plurality of channel forming regions is a direction parallel to a length direction of a shape of the pixel electrode. Channel width is made longer than channel length, so that the channel forming region has a large area.SELECTED DRAWING: Figure 1
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Inventors:
KATO MIZUKI
Application Number:
JP2022037282A
Publication Date:
June 14, 2022
Filing Date:
March 10, 2022
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G09F9/30; H01L27/32; H01L29/786; H01L51/50; H05B33/02
Domestic Patent References:
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