ドープされた酸化ガリウム結晶材料、その製造方法及び使用

Japanese Patent JP6956189

B2

The invention discloses β-gallium oxide crystalline material doped with Group VB element, and preparation methods and applications thereof. The doped β-Ga₂O₃crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10^-4to 1×10⁴Ω·cm, and/or the carrier concentration is in the range of 5 ×10¹²to 7×10²⁰/cm³. The preparation method comprises steps of: mixing M₂O₅and Ga₂O₃with a purity of 4N or more at a molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity β-Ga₂O₃crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to power electronic devices, optoelectronic devices, photocatalysts or conductive substrates.

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Summer
Sairin
Influence
Saiki

JP2019537809A

November 02, 2021

January 24, 2018

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Institute of Optical Precision Machinery, Chinese Academy of Sciences

C30B29/16; C30B11/08; C30B13/10; C30B15/04; C30B15/24; C30B33/02

JP2016175807A
JP2005235961A
JP2004262684A
JP2016015503A
JP2015083536A

Kimura Mitsuru
Taiji Morikawa
Kei Sakurada
Mie Hideki

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