To provide an electrostatic chuck that supplies heat to a wafer and transfer heat of the wafer to the electrostatic chuck side via protrusion and a backside gas, with which the wafer temperature is easily controlled and uniformity of the wafer temperature is improved.

This electrostatic chuck has an insulating layer 2 provided with an installation surface 2a on which a wafer 10 is installed, internal electrode provided in the insulating layer and a protrusion 3A protruding from the installation surface and having a contact surface 14, which is to be brought into contact with the wafer. Backside gas is made to flow in a space 11, while the wafer is in the state of being sucked. Heat is supplied to the wafer, and the heat of the wafer is transferred to the electrostatic chuck via the protrusion and the backside gas. The total area of the contact area 14 of the protrusion is 1% or smaller than the area of the internal electrode. The protrusion height H is 1 μm or higher or 10 μm or smaller.