Title:
ELEMENT USING OXIDE SEMICONDUCTOR SINGLE-CRYSTAL SUBSTRATE
Document Type and Number:
Japanese Patent JP2001093859
Kind Code:
A
Abstract:
To provide an element, having ohmic electrodes that exhibits superior oxidation resistance and long lifetime, in an element using an oxide semiconductor single crystal as a substrate.
A pair of electrodes 12a and 12b are formed on a Nb-doped SrTiO3 (100) single-crystal substrate 10 which contains 0.5 wt.% of Nb as a dopant. The electrodes 12a and 12b, each being composed of an In-Au alloy containing In and Au at a ratio of 90 to 10 on a weight basis, are arranged at a prescribed distance.
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Inventors:
ISOZAKI TAKASHI
WATABE MASAO
NASHIMOTO KEIICHI
WATABE MASAO
NASHIMOTO KEIICHI
Application Number:
JP26710399A
Publication Date:
April 06, 2001
Filing Date:
September 21, 1999
Export Citation:
Assignee:
FUJI XEROX CO LTD
International Classes:
H01L21/203; H01L21/28; (IPC1-7): H01L21/28
Attorney, Agent or Firm:
Atsushi Nakajima (3 outside)
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