Title:
ETCHING ELECTRODE
Document Type and Number:
Japanese Patent JP3662293
Kind Code:
B2
Abstract:
PURPOSE: To provide an etching electrode with no fear of an effect from electrostatic attraction or a contamination on a substrate while a decrease in throughput is prevented.
CONSTITUTION: In an etching system, a substrate 4 on a holding stage made of dielectric material formed on an etching electrode 1 is etched by casting μ-wave or high-frequency plasma while a high-frequency voltage is applied to the electrode 1. The holding stage has at least three projected parts 5 for holding the substrate. These projected parts have a height suitable to keep out plasma from invading. Then, the substrate is not contaminated and taken out from the holding stage with no fear of an effect from electrostatic attraction. A trouble in damage to the substrate or a decrease in throughput is not caused and a yield in process can be improved.
Inventors:
Eiichi Mizuno
Taro Nomura
Tsuboi Hideo
Kunibe Riju
Masahiro Ito
Toshio Hayashi
Taro Nomura
Tsuboi Hideo
Kunibe Riju
Masahiro Ito
Toshio Hayashi
Application Number:
JP8553895A
Publication Date:
June 22, 2005
Filing Date:
April 11, 1995
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
H05H1/46; C23F4/00; H01L21/302; H01L21/3065; H01L21/68; H01L21/683; (IPC1-7): H01L21/302
Domestic Patent References:
| JP8181107A |
Attorney, Agent or Firm:
Kinichi Kitamura
Masashi Yoshioka
Masashi Yoshioka