Title:
FORMATION OF INSULATION FILM AND APPARATUS THEREFOR
Document Type and Number:
Japanese Patent JPS61290726
Kind Code:
A
Abstract:
PURPOSE:To provide an insulation film having a uniform thickness, by treating an object to be treated within a reactive gas under a high pressure in a short period of time so that the rate of producing the insulation film on the surface of the object to be treated from the reactive materials depends on the pressure uniformly applied onto the surface of the object. CONSTITUTION:Silicon wafers 13 are attached onto a support 12 such that the rear faces of the wafers are contacted closely to the surface of the support. After that, the air within the container is completely removed through a gas supply section 10. Subsequently, a gas mixture of oxygen and hydrogen mixed in a predetermined ratio is introduced into the container through the gas supply section 10. The gas mixture is then exploded by means of an ignition plug 5. The surfaces of the silicon wafers 13 attached to the inner surface of the dome 2 are thereby odixized instantaneously and they are provided with insulation films of silicon oxide having a uniform thickness. Since the wafers themselves are not substantially heated by the explosion, they can be taken out of the container into the atmosphere directly after the explosion without causing any nonuniformity in the thickness of the oxide films.
Inventors:
AOSHIMA TAKAAKI
Application Number:
JP13188485A
Publication Date:
December 20, 1986
Filing Date:
June 19, 1985
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/316; H01L21/318; (IPC1-7): H01L21/316; H01L21/318
Attorney, Agent or Firm:
Katsuo Ogawa