To reduce defects in wiring resistance or the like by previously executing dammy sputtering or the like to a jig and coating the jig and the inside wall of a chamber with the film of the material the same as that of a metallic film formed on a substrate.

A jig 1 set with a dammy substrate 2 is charged to a device, and Cr sputtering (dammy sputtering) is executed. By this dammy sputtering, Cr sputtered from a Cr target 6 is adhered to the inside wall 3 of the chamber, the jig 1, a shutter 5 or the like. Next, a product substrate 4 is set to the jig 1, and Cr sputtering is executed. At this time, the product substrate 4 is subjected to reverse sputtering from the chamber inside wall 3, jig 1, shutter 5 or the like by the sputter etching or sputtering, but, since Cr is adhered to the chamber inside wall 3 or the like, the bad influence of the product substrate on the Cr film quality is small. In this way, the quality of the film formed on the substrate can be stabilized.