FORMATION OF MULTIPLE OXIDE SINGLE CRYSTAL FILM

Title:

FORMATION OF MULTIPLE OXIDE SINGLE CRYSTAL FILM

Document Type and Number:

Japanese Patent JPH03276106

Kind Code:

A

Abstract:

PURPOSE:To form a single crystal phase of LiNbO3, etc., at <=600 deg.C by epitaxially growing CaF2 on a single crystal wafer of Si or GaAs and growing a multiple oxide film having a modulating function therein. CONSTITUTION:The CaF2 is epitaxially grown on the single crystal wafer of the Si or GaAs and the single crystal of the multiple oxide film consisting of M1M2O3 (M1: alkaline metal; M2: Nb or Ta) having the modulating function is grown thereon. Lithium hydroxide (LiOH) having >=99.9% purity is used for the alkaline metal and niobium (Nb) or tantalum (Ta) having >=99.9% purity is used for the transition metal as metallic sources at the time of formation of the LiNbO3 film. These metals are previously heated by a heating and evapo rating device and the films thereof are formed at 200 to 600 deg.C on the clean CaF2 surface. Consequently, the crystal of the single film of the LiNbO3 is grown at 500 deg.C.

Inventors:

FUJIMORI TOSHINARI

Application Number:

JP7842690A

Publication Date:

December 06, 1991

Filing Date:

March 27, 1990

Export Citation:

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Assignee:

JAPAN RES DEV CORP
FUJIMORI TOSHINARI

International Classes:

G02B6/13; C30B29/30; G02B6/12; G02F1/035; H01L21/84; H01L27/15; (IPC1-7): C30B29/30; G02B6/12; G02F1/035; H01L21/84; H01L27/15

Attorney, Agent or Firm:

Toshio Nishizawa

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