Title:
HIGH FREQUENCY PLASMA PROCESSING SYSTEM
Document Type and Number:
Japanese Patent JP3279744
Kind Code:
B2
Abstract:
PURPOSE: To provide a high frequency plasma processing system in which generation of reaction products is suppressed in a discharge tube and adhesion thereof to the wall surface or falling there onto a substrate is prevented.
CONSTITUTION: The high frequency plasma processing system comprises a vacuum vessel 1 equipped with a discharge tube 4, a mechanism 8 for evacuating the vessel 1, a mechanism 9 for introducing a reaction gas into the vessel, a mechanism 10 for supplying high frequency power into the discharge tube to generate plasma of the reaction gas, and a substrate holding mechanism 2 disposed oppositely to the discharge tube in the vessel, wherein the discharge tube 4 is provided with an electrode 5 which is applied with a bias voltage at a part opposing the substrate holding mechanism. The electrode is coated with a film as required. A temperature regulator 12 for setting the temperature on the surface of the electrode at an arbitrary level is also provided.
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Inventors:
Kenichi Takagi
Application Number:
JP19434593A
Publication Date:
April 30, 2002
Filing Date:
July 09, 1993
Export Citation:
Assignee:
ANELVA Co., Ltd.
International Classes:
C23C16/50; C23F4/00; H01L21/205; H01L21/302; H01L21/3065; H05H1/46; (IPC1-7): H01L21/205; C23C16/50; C23F4/00; H01L21/3065; H05H1/46
Domestic Patent References:
| JP3123022A | ||||
| JP2290984A |
Other References:
【文献】欧州特許出願公開520519(EP,A1)
Attorney, Agent or Firm:
Hirotoshi Tamiya
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