Title:
HIGH PURITY AMMONIA, PRODUCTION METHOD THEREOF, AND PRODUCTION FACILITY OF HIGH PURITY AMMONIA
Document Type and Number:
Japanese Patent JP2014125383
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide high purity ammonia from which a GaN-based compound semiconductor excellent in luminous properties is efficiently manufactured, and a production method thereof, and to provide a production facility of the high purity ammonia.SOLUTION: Crude ammonia produced in a methanol/ammonia coproduction process, which contains hydrocarbon compounds having oxygen atoms in the molecule, is subjected to superfractionation to produce high purity ammonia with a content of the hydrocarbon compounds of 1 vol.ppm or less. The high purity ammonia is used as a nitrogen source to produce a GaN-based compound, from which a GaN-based compound semiconductor excellent in luminous properties is efficiently manufactured.
Inventors:
HOSHINO YASUYUKI
MURAKAWA MINAKO
ATOBE HITOSHI
NIHEI NAOFUMI
MURAKAWA MINAKO
ATOBE HITOSHI
NIHEI NAOFUMI
Application Number:
JP2012283474A
Publication Date:
July 07, 2014
Filing Date:
December 26, 2012
Export Citation:
Assignee:
SHOWA DENKO KK
International Classes:
C01C1/02; C01B21/06; C01C1/04
Domestic Patent References:
| JP2012214325A | 2012-11-08 | |||
| JPS56120514A | 1981-09-21 | |||
| JPS55162422A | 1980-12-17 | |||
| JP2000091235A | 2000-03-31 |
Foreign References:
| CN102249259A | 2011-11-23 |
Attorney, Agent or Firm:
Tetsuya Mori
Megumi Konishi
Hide Tanaka Tetsu
Megumi Konishi
Hide Tanaka Tetsu
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