Title:
【発明の名称】タングステンゲート電極の方法および素子
Document Type and Number:
Japanese Patent JP2003520445
Kind Code:
A
Abstract:
A tungsten gate electrode and method of fabricating the same are provided. In one aspect, a method of fabricating a gate electrode stack on a substrate is provided that includes forming an insulating film on the substrate and forming a conductor film on the insulating film by initially depositing a film of amorphous silicon and amorphous tungsten, and thereafter depositing a film of polycrystalline tungsten on the film and annealing the substrate to react the amorphous silicon with the amorphous tungsten to form tungsten silicide on the insulating film and to increase the grain structure of the polycrystalline tungsten film. The tungsten silicide film and the polycrystalline tungsten film are patterned to define the gate electrode stack. The method enables the seamless fabrication of an adhesion layer and a tungsten gate in a single chamber and without resort to titanium.
Inventors:
Hossein, Timothy Z
Gattuck-Roy, Amiya Earl
Zanotti, Jason Bee
Gattuck-Roy, Amiya Earl
Zanotti, Jason Bee
Application Number:
JP2001553570A
Publication Date:
July 02, 2003
Filing Date:
August 16, 2000
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INCORPORATED
International Classes:
H01L21/28; H01L29/423; H01L29/49; H01L29/78; (IPC1-7): H01L29/78; H01L21/28; H01L29/423; H01L29/49
Domestic Patent References:
| JPH0669498A | 1994-03-11 | |||
| JPH05315284A | 1993-11-26 | |||
| JPH06291082A | 1994-10-18 | |||
| JPH04340766A | 1992-11-27 | |||
| JPH06291084A | 1994-10-18 | |||
| JPH0347965A | 1991-02-28 | |||
| JPH0637042A | 1994-02-10 |
Attorney, Agent or Firm:
Fukami Hisaro (5 others)