To provide an infrared sensor which has a simple structure and is superior in environmental resistance.
CrNx thin films 2a and 2b (0.1≤x≤1.2) as infrared ray sensing film are formed on a substrate 1, electrodes 3a and 3d are provided to both ends of the thin films 2a and 2b, and electrodes 3b and 3c are provided to its central part. In addition, insulation layers 4a-4d are provided on the CrNx thin film 2a between the electrodes 3a and 3c, on the CrNx thin film 2a between the electrodes 3c and 3d, on the CrNx thin film 2b between the electrodes 3a and 3b, and on the CrNx thin film 2b between the electrodes 3b and 3d, respectively. Infrared ray reflection films 5a and 5b are formed on the insulation films 4c and 4b respectively, and further infrared ray absorption films 6a and 6b are formed on the insulation layers 4a and 4d respectively.
| JPS63233338 | METHOD FOR MEASURING LIGHT OUTPUT OF OPTICAL DATA LINK |
| JP2003329275 | AIR PURIFIER |
| WO/2020/195466 | INFRARED SENSOR AND INFRARED SENSOR DEVICE EQUIPPED WITH SAME |
OGAWA SOICHI
KAMASAKA TETSUYA
OE TAKAHIKO
ADACHI NAOSUKE
OSAKA SHINKU KOGYO KK
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