To provide an ionized cluster beam deposition apparatus with which a good quality vapor deposition film can be formed by reducing the effect of magnetic lines of force during induction heating when the vapor deposition film is formed on the surface of a substrate by an ionized cluster beam.
The ionized cluster beam deposition apparatus 1 is equipped with: a housing part 2 which is arranged at a position apart from an object 8 and houses a vapor deposition substance 13; a high frequency induction heating means 3 for generating a magnetic field in the direction crossing with the direction in which the object 8 is located in the housing part 2 to heat the vapor deposition substance 13 housed in the housing part 2 and to form vapor; a jetting means 9 for jetting a cluster 12 from the housing part 2; an ionizing means 5 for ionizing the cluster 12 moving toward the object 8; an acceleration means 6 for accelerating the ionized cluster by applying an acceleration voltage; and a magnetic line shielding means 4 for shielding the ionized cluster 12 from the magnetic lines of force. The magnetic line of force shielding means 4 shields the magnetic lines of force crossing with the cluster 12 moving toward the object 8.
| JPH05106030A | 1993-04-27 | |||
| JP2766153B2 | 1998-06-18 | |||
| JPH08209330A | 1996-08-13 | |||
| JPH06119992A | 1994-04-28 | |||
| JP2003268538A | 2003-09-25 | |||
| JPS62294177A | 1987-12-21 | |||
| JP2002356770A | 2002-12-13 |
| WO2007026649A1 | 2007-03-08 |
Tsutomu Toyama
Hidemi Matsukura
Yutaka Nagata