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Title:
LASER ANNEALING METHOD AND LASER ANNEALER
Document Type and Number:
Japanese Patent JP2005217213
Kind Code:
A
Abstract:

To anneal a semiconductor film by scanning a substrate with a time modulated continuous oscillation laser beam shaped into an elongated shape at a high velocity without rotating the substrate.

A laser beam subjected to time modulation by a modulator 7 and shaped into an elongated shape by a beam shaper 10 is rotated about the optical axis of an image rotator 13 inserted between the beam shaper and the substrate thus rotating the longitudinal direction of the elongated laser beam about the optical axis on a substrate 15. At the time of annealing in the plurality of directions on the substrate 15, the laser beam shaped into an elongated shape is rotated on the substrate and a stage mounting the substrate moves only in the two directions, i.e. XY directions.


Inventors:
HONGO MIKIO
YAZAKI AKIO
HATANO MUTSUKO
Application Number:
JP2004022461A
Publication Date:
August 11, 2005
Filing Date:
January 30, 2004
Export Citation:
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Assignee:
HITACHI LTD
HITACHI DISPLAYS LTD
International Classes:
H01L21/20; B23K26/073; G02B27/09; G02F1/13; H01L21/268; H01L21/77; (IPC1-7): H01L21/268; H01L21/20
Domestic Patent References:
JPH11352419A1999-12-24
JPH11352420A1999-12-24
JP2003124136A2003-04-25
JP2003109911A2003-04-11
JPH10258383A1998-09-29
JP2004153150A2004-05-27
JP2000323428A2000-11-24
JPH0780674A1995-03-28
JPH06223397A1994-08-12
Foreign References:
US4826299A1989-05-02
Attorney, Agent or Firm:
Yoji Onodera



 
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