Title:
LIQUID-PHASE EPITAXIAL GROWTH METHOD
Document Type and Number:
Japanese Patent JPS61198718
Kind Code:
A
Abstract:
PURPOSE:To obtain an AlInAs thick-film lattice-aligning with an InP substrate by a solution having a composition fitted for a growth-start temperature by using an Al-In-As three-element solution and lowering the start temperature in succession. CONSTITUTION:InP having a (111) A face from which In atoms are exposed is used, and XAl 5.24X10<-6>TG-3.28X10<-3> and XAs 7.81X10<-4>TG-0.45 are each selected in several growth-start temperature TG and a liquid-layer composition X of Al and As lattice-aligning with InP. A first layer is grown at TG=790 deg.C and temperature-drop width DELTAT=10 deg.C first, a second layer is grown at TG=780 deg.C and DELTAT=10 deg.C, and the thickness of several growth layer is limited in an extent that mirror surfaces are acquired. According to the constitution, a thick-film in 1mum or more consisting of AlInAs lattice-aligning with InP can be shaped through continuous multilayer growth, thus resulting in an advantageous state to the formation of an avalanche photodiode.
Inventors:
YAMAZAKI SUSUMU
Application Number:
JP3912185A
Publication Date:
September 03, 1986
Filing Date:
February 28, 1985
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/107; H01L21/208; H01S5/00; (IPC1-7): H01L33/00; H01S3/18
Attorney, Agent or Firm:
Koshiro Matsuoka