Title:
MANUFACTURE OF PHOTODETECTOR
Document Type and Number:
Japanese Patent JPH01130575
Kind Code:
A
Abstract:
PURPOSE:To prevent dry spots on a diffusion layer surface, and reduce the irregularity of characteristics, by forming a thin film on a semiconductor layer, through which impurity elements are diffused. CONSTITUTION:A wafer 8 is manufactured by forming a CdXHg1-X Te layer 1 on a CdTe substrate 3. A CdTe thin film 11 is vapor-deposited on the whole side of the layer 1, and a diffusion mask is formed by patterning an insulating film 9. After In 10 is vapor-deposited on the whole side of the layer 1, an n-type diffusion layer 2 is formed by heat treatment. Then the diffusion mask, the In 10 and the film 11 are eliminated. The film 11 formed in this process contains no Hg, and the layer 1 is not directly in contact with the In 10, so that do not on the surface of the layer 1 after the film 11 is eliminated. Therefore, a high quality element with little irregularity of characteristics is obtained.
Inventors:
YOSHIDA YASUAKI
OKATA RYOJI
OKATA RYOJI
Application Number:
JP28997087A
Publication Date:
May 23, 1989
Filing Date:
November 16, 1987
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/38; H01L31/0264; H01L31/08; H01L31/10; (IPC1-7): H01L21/38; H01L31/08; H01L31/10
Attorney, Agent or Firm:
Masuo Oiwa (2 outside)